ASM America, Inc.
Patent Owner
Stats
- 284 US PATENTS IN FORCE
- 3 US APPLICATIONS PENDING
- Feb 13, 2018 most recent publication
Details
- 284 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 68,592 Total Citation Count
- Mar 29, 1979 Earliest Filing
- 117 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
Rank in Class
Top Patents (by citation)
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Recent Publications
Publication #
Title
Filing Date
Pub Date
Intl Class
2014/0346,650 SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIESAug 11, 14Nov 27, 14[C23C, H01L]
2013/0023,129 PRESSURE TRANSMITTER FOR A SEMICONDUCTOR PROCESSING ENVIRONMENTJul 20, 11Jan 24, 13[C23C, H01L]
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
9892908 Process feed management for semiconductor substrate processingMar 17, 15Feb 13, 18[C23C, H01J, H01L]
9885123 Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flowMar 16, 11Feb 06, 18[C23C, C30B]
9631272 Atomic layer deposition of metal carbide films using aluminum hydrocarbon compoundsNov 01, 13Apr 25, 17[C23C, H01L]
9466574 Plasma-enhanced atomic layer deposition of conductive material over dielectric layersSep 09, 13Oct 11, 16[C23C, H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2012/0100,308 TERNARY METAL ALLOYS WITH TUNABLE STOICHIOMETRIESAbandonedOct 25, 10Apr 26, 12[B05C, H05H]
2010/0266,765 METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATEAbandonedApr 21, 09Oct 21, 10[C23C]
2009/0315,093 ATOMIC LAYER DEPOSITION OF METAL CARBIDE FILMS USING ALUMINUM HYDROCARBON COMPOUNDSAbandonedApr 15, 09Dec 24, 09[H01L]
2009/0101,633 REACTOR WITH SMALL LINEAR LAMPS FOR LOCALIZED HEAT CONTROL AND IMPROVED TEMPERATURE UNIFORMITYAbandonedOct 19, 07Apr 23, 09[F27D]
2008/0248,200 APPARATUS AND METHODS FOR ISOLATING CHEMICAL VAPOR REACTIONS AT A SUBSTRATE SURFACEAbandonedJun 06, 08Oct 09, 08[C23C]
2008/0081,112 Batch reaction chamber employing separate zones for radiant heating and resistive heatingAbandonedSep 29, 06Apr 03, 08[C23C, B05D]
2008/0032,502 SAFETY FEATURES FOR SEMICONDUCTOR PROCESSING APPARATUS USING PYROPHORIC PRECURSORAbandonedMar 01, 07Feb 07, 08[C23C, H01L]
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